According to the Korea Science and Technology Research Institute, the Institute's optoelectronic materials research group combined tungsten-selenium 2-dimensional nanofilms with 1-dimensional ZnO nanowires to develop next-generation photodiode devices that can sense from ultraviolet to near-infrared light. The research results were published in the "Advanced Functional Materials" (IF), an international academic journal.

The photodiode element is an important part of the camera's camera and digital camera's pixels. The image sensor used in the camera can be converted to an electronic signal by sensing the light through the photodiode element, and then processing the signal through the chip. Low-dimensional nano-semiconductor materials are the main development direction of future semiconductor materials.

The tungsten selenium 2-dimensional nanomembrane used in this research group is a type of chalcogen, and is a 2-dimensional laminated crystal nano P-type semiconductor material that can be used in flexible displays, sensors, and flexible electronic components. It is durable and accurate. High sexual characteristics. One-dimensional zinc oxide (ZnO) nanowires are n-type semiconductor materials that can be applied to high-performance electronic chips and have excellent electron mobility characteristics. The team used a chemical meteorological deposition method to combine the synthesized 1D zinc oxide nanowires with 2D nanofilms to form a (PN) photodiode element, which was then applied to the image sensor pixels.

The head of the research group stated that the new components developed this time will further promote the commercialization of next-generation image sensor elements based on nano-semiconductor pixels.


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